Datasheet4U Logo Datasheet4U.com

V10P8 - Trench MOS Barrier Schottky Rectifier

Features

  • Very low profile - typical height of 1.1 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 ADDIT.

📥 Download Datasheet

Datasheet Details

Part number V10P8
Manufacturer Vishay
File Size 100.49 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10P8 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
V10P11P Metal-Oxide Varistors Littelfuse
V10P130AUTO Metal-Oxide Varistors Littelfuse
V10P140AUTO Metal-Oxide Varistors Littelfuse
V10P14AUTO Metal-Oxide Varistors Littelfuse
V10P14P Metal-Oxide Varistors Littelfuse

Other Datasheets by Vishay

Part Number Description
V10P10 Trench MOS Barrier Schottky Rectifier
V10P12 Trench MOS Barrier Schottky Rectifier
V10P15 Trench MOS Barrier Schottky Rectifier
V10P20 Trench MOS Barrier Schottky Rectifier
V10P45 Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com V10P8 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.44 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.
Published: |