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V10KL45C
Vishay General Semiconductor
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.29 V at IF = 2.5 A
8 7 6 5
FlatPAK 5 x 6
1, 2 5, 6, 7, 8
3, 4
1 2 3 4
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5 A (TA = 125 °C) TJ max. Package
2x5A 45 V 100 A 0.35 V
150 °C FlatPAK 5 x 6
Circuit configuration
Common cathode
FEATURES
• Trench MOS Schottky technology
Available
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.
V10KL45C Datasheet
