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V10D202C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology generation 2 Available.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TY.

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Datasheet Details

Part number V10D202C
Manufacturer Vishay
File Size 120.47 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10D202C Datasheet

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Full PDF Text Transcription

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www.vishay.com V10D202C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D202C Anode 1 K Anode 2 Cathode ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. Package 2 x 5.0 A 200 V 100 A 0.67 V 175 °C SMPD (TO-263AC) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology generation 2 Available • Very low profile - typical height of 1.
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