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SiSS52DN - N-Channel 30V MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen V power MOSFET.
  • Very low RDS x Qg figure-of-merit (FOM).
  • Enables higher power density with very low RDS(on) and thermally enhanced compact package.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiSS52DN
Manufacturer Vishay
File Size 276.57 KB
Description N-Channel 30V MOSFET
Datasheet download datasheet SiSS52DN Datasheet
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Full PDF Text Transcription

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www.vishay.com SiSS52DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.0012 0.0019 19.9 162 Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free, halogen-free, BLR and IOL FEATURES • TrenchFET® Gen V power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Enables higher power density with very low RDS(on) and thermally enhanced compact package • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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