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SiSS4402DN
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PowerPAK® 1212-8S D
D
D 6
D 7
8
5
3.3 mm
1 Top View
3.3 mm
PRODUCT SUMMARY
VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration
1
4
3 S
2 S
S
G
Bottom View
40 0.0022 0.0032
21.5 128 Single
FEATURES
• TrenchFET® Gen IV power MOSFET
• Very low Qg and Qoss reduce power loss and improve efficiency
• Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
• 100 % Rg and UIS tested • Material categorization: for definitions of compliance
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