Datasheet4U Logo Datasheet4U.com

SiSF06DN - Dual N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low source-to-source on resistance.
  • Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package.
  • 100 % Rg and UIS tested.
  • Optimizes circuit layout for bi-directional current flow.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet Details

Part number SiSF06DN
Manufacturer Vishay
File Size 180.88 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SiSF06DN Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SIS0100 Black and White Image Sensor Camera Module Sanyo Semicon Device
SiS1057 JFET Operational Amplifier Silicon Supplies
SIS23C128 16K x 8 CMOS Mask ROM Silicon Integrated Systems
SIS23C128A 16K x 8 CMOS Mask ROM Silicon Integrated Systems
SIS23C256 CMOS MASK ROM ETC

Other Datasheets by Vishay

Part Number Description
SiSF00DN Dual N-Channel 30V MOSFET
SiSF04DN Dual N-Channel 30V MOSFET
SiSF20DN Dual N-Channel MOSFET
SiS106DN N-Channel 60V MOSFET
SiS110DN N-Channel 100V MOSFET

Full PDF Text Transcription

Click to expand full text
www.vishay.com SiSF06DN Vishay Siliconix Common Drain Dual N-Channel 30 V (S1-S2) MOSFET PowerPAK® 1212-8SCD S1 S1 8 S2 S2 6 7 5 S2 S1 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY VS1S2 (V) RS1S2(on) max. (Ω) at VGS = 10 V RS1S2(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) g IS1S2 (A) a Configuration 1 4 G2 3 D2 2 D1 G1 Bottom View 30 0.00450 0.00695 14 101 Common drain FEATURES • TrenchFET® Gen IV power MOSFET • Very low source-to-source on resistance • Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package • 100 % Rg and UIS tested • Optimizes circuit layout for bi-directional current flow • Material categorization: for definitions of compliance please see www.vishay.
Published: |