Datasheet4U Logo Datasheet4U.com

SiSA01DN - P-Channel 30V MOSFET

Features

  • TrenchFET® Gen IV p-channel power MOSFET.
  • Provides exceptionally low RDS(ON) in a compact package that is thermally enhanced.
  • Enables higher power density.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet Details

Part number SiSA01DN
Manufacturer Vishay
File Size 240.85 KB
Description P-Channel 30V MOSFET
Datasheet download datasheet SiSA01DN Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SIS0100 Black and White Image Sensor Camera Module Sanyo Semicon Device
SiS1057 JFET Operational Amplifier Silicon Supplies
SIS23C128 16K x 8 CMOS Mask ROM Silicon Integrated Systems
SIS23C128A 16K x 8 CMOS Mask ROM Silicon Integrated Systems
SIS23C256 CMOS MASK ROM ETC

Other Datasheets by Vishay

Part Number Description
SISA04DN N-Channel MOSFET
SISA10DN N-Channel MOSFET
SiSA12DN N-Channel 30 V (D-S) MOSFET
SISA14DN N-Channel 30V MOSFET
SiS106DN N-Channel 60V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com SiSA01DN Vishay Siliconix P-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8 Single D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View -30 0.0049 0.0082 27 60 a, g Single FEATURES • TrenchFET® Gen IV p-channel power MOSFET • Provides exceptionally low RDS(ON) in a compact package that is thermally enhanced • Enables higher power density • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
Published: |