SiRC10DP - N-Channel MOSFET

Datasheet Summary

Features

TrenchFET® Gen IV power MOSFET.
SKYFET® with monolithic Schottky diode.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

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Datasheet Details

Part number	SiRC10DP
Manufacturer	Vishay
File Size	228.86 KB
Description	N-Channel MOSFET
Datasheet	SiRC10DP Datasheet
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Full PDF Text Transcription

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www.vishay.com SiRC10DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET With Schottky Diode PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 30 0.0035 0.0052 11.2 60 a, g Single FEATURES • TrenchFET® Gen IV power MOSFET • SKYFET® with monolithic Schottky diode • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.

Published: Mar 17, 2024 |