SiRA32DP - N-Channel MOSFET

Datasheet Summary

Features

TrenchFET® Gen IV power MOSFET.
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

📥 Download Datasheet

Datasheet Details

Part number	SiRA32DP
Manufacturer	Vishay
File Size	224.26 KB
Description	N-Channel MOSFET
Datasheet	SiRA32DP Datasheet
Additional preview pages of the SiRA32DP datasheet.

📁 Similar Datasheet

SIR-320ST3F - Infrared light emitting diode (Rohm)
SIR-341ST3F - Infrared light emitting diode (Rohm)
SIR-34ST3F - Infrared light emitting diode (Rohm)
SIR-505STA47 - Infrared light emitting diode (Rohm)
SIR-563ST3F - Infrared light emitting diode (Rohm)
SIR-568ST3 - Infrared light emitting diode (Rohm)
SIR-568ST3F - Infrared light emitting diode (Rohm)
SIR-56ST3 - Infrared light emitting diode (Rohm)
SIR-56ST3F - Infrared light emitting diode (Rohm)
SIR19-315-TR8 - 0603 Package Infrared Chip LED (Everlight Electronics)

Other Datasheets by Vishay

SIRA00DP - N-Channel MOSFET
SIRA04DP - N-Channel MOSFET
SiRA06DDP - N-Channel MOSFET
SIRA06DP - N-Channel 30v MOSFET
SiRA10DDP - N-Channel 30V MOSFET
SIRA10DP - N-Channel MOSFET
SiRA12DDP - N-Channel MOSFET
SIRA12DP - N-Channel 30v MOSFET

Full PDF Text Transcription

Click to expand full text

www.vishay.com SiRA32DP Vishay Siliconix N-Channel 25 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 25 0.00120 0.00183 24.3 185 g Single FEATURES • TrenchFET® Gen IV power MOSFET • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.

Published: Mar 17, 2024 |