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www.vishay.com
SiR870BDP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PowerPAK® SO-8 Single D
D8 D7 D6 5
6.15 mm 1
Top View
5.15 mm
PRODUCT SUMMARY
VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration
1 2S 3S 4S G Bottom View
100 0.0061 0.0077
33 81 Single
FEATURES • TrenchFET® Gen IV power MOSFET
• Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of
compliance please see www.vishay.
SiR870BDP Datasheet
