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SiJH402E - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen IV power MOSFET.
  • Fully lead (Pb)-free device.
  • Very low RDS x Qg figure of merit (FOM).
  • 50 % smaller footprint than D2PAK (TO-263).
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiJH402E
Manufacturer Vishay
File Size 229.48 KB
Description N-Channel MOSFET
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www.vishay.com SiJH402E Vishay Siliconix N-Channel 40 V (D-S) 175 °C MOSFET PowerPAK® 8 x 8L 8 mm S G 1 Top View S S 7.9 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration D G S1 S2 S3 4 Bottom View 40 0.00065 0.00094 75 450 Single FEATURES • TrenchFET® Gen IV power MOSFET • Fully lead (Pb)-free device • Very low RDS x Qg figure of merit (FOM) • 50 % smaller footprint than D2PAK (TO-263) • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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