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SiJA58DP - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen IV power MOSFET.
  • Tuned for the lowest RDS-Qoss FOM.
  • 100 % Rg and UIS tested.
  • Qgd/Qgs ratio < 1 optimizes switching characteristics.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiJA58DP
Manufacturer Vishay
File Size 232.20 KB
Description N-Channel MOSFET
Datasheet download datasheet SiJA58DP Datasheet
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www.vishay.com SiJA58DP Vishay Siliconix N-Channel 40 V (D-S) 150 °C MOSFET PowerPAK® SO-8L Single 6.15 mm 1 5.13 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration D 1 2S 3S 4S G Bottom View 40 0.00265 0.00360 23 109 Single FEATURES • TrenchFET® Gen IV power MOSFET • Tuned for the lowest RDS-Qoss FOM • 100 % Rg and UIS tested • Qgd/Qgs ratio < 1 optimizes switching characteristics • Material categorization: for definitions of compliance please see www.vishay.
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