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SiJA52DP - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen IV power MOSFET.
  • Tuned for the lowest RDS-Qoss FOM.
  • 100 % Rg and UIS tested.
  • Qgd / Qgs ratio < 1 optimizes switching characteristics.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiJA52DP
Manufacturer Vishay
File Size 230.85 KB
Description N-Channel MOSFET
Datasheet download datasheet SiJA52DP Datasheet
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www.vishay.com SiJA52DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max. 0.0017 at VGS = 10 V 0.0023 at VGS = 4.5 V ID (A) a, g 60 60 PowerPAK® SO-8L Single Qg (Typ.) 47.5 nC D 6.15 mm 1 5.13 mm 1 2S 3S 4S G Top View Bottom View Ordering Information:  SiJA52DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® Gen IV power MOSFET • Tuned for the lowest RDS-Qoss FOM • 100 % Rg and UIS tested • Qgd / Qgs ratio < 1 optimizes switching characteristics • Material categorization: for definitions of compliance please see www.vishay.
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