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SiHW33N60E
Vishay Siliconix
E Series Power MOSFET
D TO-247AD
G
G D S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
150 24 42 Single
0.099
FEATURES • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
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