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SiHU6N62E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
700
VGS = 10 V
0.9
34
4
8
Single
IPAK (TO-251) D
GD S
D
G S
N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
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SiHU6N62E Datasheet
