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SiHU5N80AE
Vishay Siliconix
E Series Power MOSFET
IPAK (TO-251)
D
D G
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
850 VGS = 10 V
16.5 3 6
Single
1.17
FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Integrated Zener diode ESD protection • Material categorization: for definitions of compliance
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