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SiHU5N50D - Power MOSFET

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Features

  • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness Available - Avalanche energy rated (UIS).
  • Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiHU5N50D
Manufacturer Vishay
File Size 208.41 KB
Description Power MOSFET
Datasheet download datasheet SiHU5N50D Datasheet
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www.vishay.com SiHU5N50D Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 1.5 20 3 5 Single IPAK (TO-251) D GD S D G S N-Channel MOSFET FEATURES • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness Available - Avalanche energy rated (UIS) • Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching • Material categorization: for definitions of compliance please see www.vishay.
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