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SiHU4N80E - Power MOSFET

Datasheet Summary

Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiHU4N80E
Manufacturer Vishay
File Size 187.53 KB
Description Power MOSFET
Datasheet download datasheet SiHU4N80E Datasheet
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www.vishay.com SiHU4N80E Vishay Siliconix E Series Power MOSFET IPAK (TO-251) D D G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 1.1 32 4 6 Single FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.
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