Click to expand full text
www.vishay.com
SiHU4N80AE
Vishay Siliconix
E Series Power MOSFET
IPAK (TO-251) D
GD S
D
G S
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
850 VGS = 10 V
16.5 3 5
Single
1.25
FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
please see www.vishay.
SiHU4N80AE Datasheet
