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SiHR100N60EF
Vishay Siliconix
EF Series Power MOSFET With Fast Body Diode
PowerPAK® 8 x 8LR
D
D8 D7 D6
5
D
10.42 mm
S
S
KS
G
8 mm
G
KS 4
S S2
3
1
Top View
Bottom View
Pin 5 to 8: drain
Pin 4: gate
Pin 3: Kelvin connection
Pin 1 to 2: source N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
53 16 8 Single
0.087
FEATURES • 4th generation E series technology • Low figure of merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
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