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SiHH150N60E
Vishay Siliconix
E Series Power MOSFET
PowerPAK® 8 x 8
4 1
2 3 3
Pin 4: drain
Pin 1: gate
Pin 2: Kelvin connection
Pin 3: source N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
36 10 6 Single
0.137
FEATURES • 4th generation E series technology
• Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance please see www.vishay.
SiHH150N60E Datasheet
