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SiHF35N60EF - Power MOSFET

Features

  • A specific on resistance (mΩ-cm2) reduction of 25 %.
  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com SiHF35N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode TO-220 FULLPAK D G GDS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 134 16 48 Single 0.084 FEATURES • A specific on resistance (mΩ-cm2) reduction of 25 % • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.
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