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SiEH4800EW - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen IV power MOSFET.
  • Wettable flanks enhances solderability.
  • Fully lead (Pb)-free device.
  • Very low RDS x Qg figure of merit (FOM).
  • 50 % smaller footprint than D2PAK (TO-263).
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiEH4800EW
Manufacturer Vishay
File Size 267.59 KB
Description N-Channel MOSFET
Datasheet download datasheet SiEH4800EW Datasheet
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Full PDF Text Transcription

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www.vishay.com SiEH4800EW Vishay Siliconix N-Channel 80 V (D-S) 175 °C MOSFET PowerPAK® 8 x 8 BWL Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration Bottom View 80 0.00115 0.00135 140 608 Single FEATURES • TrenchFET® Gen IV power MOSFET • Wettable flanks enhances solderability • Fully lead (Pb)-free device • Very low RDS x Qg figure of merit (FOM) • 50 % smaller footprint than D2PAK (TO-263) • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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