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Si4730EY
Vishay Siliconix
Current Sensing MOSFET, N-Channel 30-V (D-S)
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.015 @ VGS = 10 V 0.020 @ VGS = 4.5 V
ID (A)
11.7 10.1
SENSE KELVIN
S G
1 2 3 4
SO-8 Top View
8D 7D 6D 5D
D
G SENSE
KELVIN N-Channel MOSFET S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS ID
IDM IS PD
TJ, Tstg
30 "20 11.7 9.8
40 3.3 3.6 2.5
–55 to 175
8.0 6.7
1.6 1.7 1.
Si4730EY Datasheet
