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SUG90090E - N-Channel MOSFET

Features

  • ThunderFET® power MOSFET.
  • Low RDS - Qg figure-of-merit (FOM).
  • Maximum 175 °C junction temperature.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SUG90090E
Manufacturer Vishay
File Size 193.96 KB
Description N-Channel MOSFET
Datasheet download datasheet SUG90090E Datasheet

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Full PDF Text Transcription

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www.vishay.com SUG90090E Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET TO-247 Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration S D G 200 0.0095 0.0104 86 100 d Single FEATURES • ThunderFET® power MOSFET • Low RDS - Qg figure-of-merit (FOM) • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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