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SiZ998DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel1
Channel2
VDS (V) 30
30
RDS(on) (Ω) (MAX.) 0.0067 at VGS = 10 V 0.0100 at VGS = 4.5 V 0.0028 at VGS = 10 V 0.0038 at VGS = 4.5 V
ID (A) a, g Qg (TYP.) 20 5.4 nC 20 60 13.2 nC 60
PowerPAIR® 6 x 5 G2
S2
S2
S2 6
7
8
5 S1/D2
(Pin 9)
6 mm 1 5 mm
Top View
D1 1
4 D1
3 D1
2 D1
G1
Bottom View
Ordering Information:
SiZ998DT-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES • TrenchFET® Gen IV power MOSFETs • SkyFET® low-side MOSFET with integrated
Schottky
• 100 % Rg and UIS tested • Material categorization: for definitions of
compliance please see www.vishay.
SIZ998DT Datasheet
