SIRA18ADP - N-Channel MOSFET

Datasheet Summary

Features

TrenchFET® Gen IV power MOSFET.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

📥 Download Datasheet

Datasheet Details

Part number	SIRA18ADP
Manufacturer	Vishay
File Size	379.87 KB
Description	N-Channel MOSFET
Datasheet	SIRA18ADP Datasheet
Additional preview pages of the SIRA18ADP datasheet.

📁 Similar Datasheet

SIR-320ST3F - Infrared light emitting diode (Rohm)
SIR-341ST3F - Infrared light emitting diode (Rohm)
SIR-34ST3F - Infrared light emitting diode (Rohm)
SIR-505STA47 - Infrared light emitting diode (Rohm)
SIR-563ST3F - Infrared light emitting diode (Rohm)
SIR-568ST3 - Infrared light emitting diode (Rohm)
SIR-568ST3F - Infrared light emitting diode (Rohm)
SIR-56ST3 - Infrared light emitting diode (Rohm)
SIR-56ST3F - Infrared light emitting diode (Rohm)
SIR19-315-TR8 - 0603 Package Infrared Chip LED (Everlight Electronics)

Other Datasheets by Vishay

SiRA18DDP - N-Channel 30V MOSFET
SIRA18DP - N-Channel 30V MOSFET
SiRA10DDP - N-Channel 30V MOSFET
SIRA10DP - N-Channel MOSFET
SiRA12DDP - N-Channel MOSFET
SIRA12DP - N-Channel 30v MOSFET
SiRA14DP - N-Channel 30 V (D-S) MOSFET
SiRA16DP - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

www.vishay.com SiRA18ADP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. 0.0087 at VGS = 10 V 0.0135 at VGS = 4.5 V ID (A) a 30.6 24.5 PowerPAK® SO-8 Single D D8 D7 D6 5 Qg (TYP.) 6.9 nC 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiRA18ADP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.

Published: Feb 12, 2016 |