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N-Channel 25-V (D-S) MOSFET
SiR850DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.007 at VGS = 10 V 25
0.009 at VGS = 4.5 V
PowerPAK SO-8
ID (A)a 30a 30a
Qg (Typ.) 8.4 nC
6.15 mm
D 8D
7 D
6 D
5
S 1S
5.15 mm
2 S
3 G
4
Bottom View Ordering Information: SiR850DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free • TrenchFET® Power MOSFET
• 100 % Rg Tested • 100 % UIS Tested
APPLICATIONS
• Synchronous Buck - High-Side
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Avalanche Current Avalanche Energy
L = 0.
SIR850DP Datasheet
