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SIE882DF - N-channel MOSFET

Datasheet Summary

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Gen III Power MOSFET.
  • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling.
  • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size, ≤ 100 V.
  • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number SIE882DF
Manufacturer Vishay
File Size 202.61 KB
Description N-channel MOSFET
Datasheet download datasheet SIE882DF Datasheet
Additional preview pages of the SIE882DF datasheet.

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Full PDF Text Transcription

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New Product N-Channel 25-V (D-S) MOSFET SiE882DF Vishay Siliconix PRODUCT SUMMARY ID (A)a VDS (V) RDS(on) (Ω) Silicon Package Limit Limit Qg (Typ.) 0.0014 at VGS = 10 V 229 25 0.0018 at VGS = 4.5 V 202 60 46 nC 60 Package Drawing www.vishay.
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