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SIAA40DJ - MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Tuned for the lowest RDS - Qoss FOM.
  • Thermally enhanced PowerPAK® SC-70 package - Small footprint area.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SiAA40DJ Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () MAX. 0.0125 at VGS = 10 V 0.0160 at VGS = 4.5 V ID (A) a 30 26.6 Qg (TYP.) 7.7 PowerPAK® SC-70-6L Single D D6 S5 4 2.05 mm 1 2.05 mm Top View S 7 1 2D 3D G Bottom View Marking Code: A L Ordering Information: SiAA40DJ-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® Gen IV power MOSFET • Tuned for the lowest RDS - Qoss FOM • Thermally enhanced PowerPAK® SC-70 package - Small footprint area • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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