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SIA468DJ - MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • 100 % Rg tested.
  • The highest continuous drain current capability in its class.
  • Very low RDS-Qg FOM and Qgd elevate efficiency.
  • Increase power density of your design.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com SiA468DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) 0.0084 at VGS = 10 V 0.0114 at VGS = 4.5 V ID (A) a 37.8 32.5 Qg (TYP.) 8.2 nC PowerPAK® SC-70-6L Single D D6 S5 4 2.05 mm 1 2.05 mm Top View S 72 3D G Bottom View Marking Code: AX Ordering Information:  SiA468DJ-T1-GE3 (lead (Pb)-free and halogen-free) 1 D FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg tested • The highest continuous drain current capability in its class • Very low RDS-Qg FOM and Qgd elevate efficiency • Increase power density of your design • Material categorization: for definitions of compliance please see www.vishay.
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