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SI7998DP - Dual N-Channel 30-V (D-S) MOSFET

Features

  • TrenchFET® power MOSFET.
  • PWM optimized.
  • 100 % UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SI7998DP
Manufacturer Vishay
File Size 389.85 KB
Description Dual N-Channel 30-V (D-S) MOSFET
Datasheet download datasheet SI7998DP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com Si7998DP Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30 RDS(on) (Ω) 0.0093 at VGS = 10 V 0.0124 at VGS = 4.5 V 0.0053 at VGS = 10 V 0.0070 at VGS = 4.5 V ID (A) a 25 25 30 30 Qg (TYP.) 8.2 nC 15.3 nC PowerPAK® SO-8 Dual D1 D1 8 D2 7 D2 6 5 FEATURES • TrenchFET® power MOSFET • PWM optimized • 100 % UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • System Power DC/DC D1 D2 6.15 mm 1 Top View 5.
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