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SI7430DP - N-Channel MOSFET

Features

  • Extremely Low Qgd WFET® Technology for Reduced dV/dt, Qgd and Shoot-Through.
  • 100 % Rg Tested.
  • 100 % UIS Tested RoHS.

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Datasheet preview – SI7430DP

Datasheet Details

Part number SI7430DP
Manufacturer Vishay
File Size 138.70 KB
Description N-Channel MOSFET
Datasheet download datasheet SI7430DP Datasheet
Additional preview pages of the SI7430DP datasheet.

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Full PDF Text Transcription

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Si7430DP New Product www.DataSheet4U.com Vishay Siliconix N-Channel 150-V (D-S) WFET PRODUCT SUMMARY VDS (V) 150 rDS(on) (Ω) 0.045 at VGS = 10 V 0.047 at VGS = 8 V ID (A)a 26 25 23 nC Qg (Typ) FEATURES • Extremely Low Qgd WFET® Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS PowerPAK SO-8 • Primary Side Switch • Single-Ended Power Switch 5.15 mm D 6.15 mm S 1 2 3 S S G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: Si7430DP-T1-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
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