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SI5922DU - Dual N-Channel 30V MOSFET

Features

  • TrenchFET® power MOSFET.
  • 100 % Rg and UIS tested.
  • New thermally enhanced PowerPAK® ChipFET® package - Small footprint area - Low on-resistance - Thin 0.8 mm profile.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SI5922DU
Manufacturer Vishay
File Size 196.26 KB
Description Dual N-Channel 30V MOSFET
Datasheet download datasheet SI5922DU Datasheet
Additional preview pages of the SI5922DU datasheet.

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Full PDF Text Transcription

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www.vishay.com Si5922DU Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PowerPAK® ChipFET® Dual D2 D2 6 D1 7 D1 8 5 1.9 mm 1 3.0 mm Top View Marking code: CH 1 4 G2 3 S2 2 G1 S1 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 6 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 30 0.0192 0.0220 0.0245 4.7 6 Dual ORDERING INFORMATION Package Lead (Pb)-free and halogen-free FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • New thermally enhanced PowerPAK® ChipFET® package - Small footprint area - Low on-resistance - Thin 0.8 mm profile • Material categorization: for definitions of compliance please see www.vishay.
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