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Si4484EY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0.034 @ VGS = 10 V 0.040 @ VGS = 6.0 V
ID (A)
6.9 6.4
D
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4484EY Si4484EY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Maximum Power Dissipationa Operating Junction and Storage Temperature Range Conduction)a TA = 25_C TA = 85_C L = 0.1 0 1 mH TA = 25_C TA = 85_C
Symbol
VDS VGS
10 secs
100 "20 6.9
Steady State
Unit
V
4.8 3.
SI4484EY Datasheet
