• Part: RFLW3N1100B
  • Description: High Frequency Wire Bondable RF Spiral Inductor
  • Manufacturer: Vishay
  • Size: 377.10 KB
Download RFLW3N1100B Datasheet PDF
Vishay
RFLW3N1100B
FEATURES - High frequency - Wire bond assembly - Small size: 0.030" x 0.030" x 0.020" - Low DCR, high Q - Low parasitic capacitance, high SRF - Equivalent circuit model enclosed - S parameter files available for download - Sample kit available - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - RF choking for DC biasing - RF tuning circuits - Lumped element filters STANDARD ELECTRICAL SPECIFICATIONS PARAMETER Inductance Range (1) Tolerance (2) Max. Power Handling (3) Operating Temperature Storage Temperature Stability, 1000 h, +125 °C, 125 m W ESD: AEC-Q200-002, ponent classification 5B (up to 16 k V) VALUE 0.003 to 0.03 ± 20 125 -55 to +125 -55 to +125 2.0 max. R/R 5.0 max. R/R Notes (1) Custom values available upon request. See custom design section below (2) Main source of value tolerance is due to variation in wire bonds. See “test fixture” section below (3) Maximum rated power of 125 m W at 70 °C, linearly de-rated to zero at 125...