IRLD120
FEATURES
- Dynamic d V/dt rating
- Repetitive avalanche rated
- For automatic insertion
- End stackable
- Logic-level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- 175 °C operating temperature
- Material categorization: for definitions of pliance please see .vishay./doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION
Package Lead (Pb)-free
HVMDIP IRLD120Pb F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor Single pulse avalanche...
