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IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
900 VGS = 10 V
38
Qgs (nC)
4.7
Qgd (nC)
21
Configuration
Single
8.0 D
I2PAK (TO-262) D2PAK (TO-263)
G D S
G
S N-Channel MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount (IRFBF20S, SiHFBF20S) • Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) • Available in Tape and Reel (IRFBF20S, SiHFBF20S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.