IRF9Z24S
FEATURES
- Halogen-free According to IEC 61249-2-21
Definition
- Advanced Process Technology
- Surface Mount (IRF9Z24S, Si HF9Z24S)
- Low-Profile Through-Hole (IRF9Z24L, Si HF9Z24L)
- 175 °C Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche Rated
- pliant to Ro HS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of acmodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can...
