IRF830AS
FEATURES
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche and dynamic d V/dt ruggedness
Available
- Fully characterized capacitance and avalanche voltage and current
Available
- Effective Coss specified
- Material categorization: for definitions of pliance please see .vishay./doc?99912
Note
- This datasheet provides information about parts that are
Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details
APPLICATIONS
- Switch mode power supply (SMPS)
- Uninterruptible power supply
- High speed power switching
TYPICAL SMPS TOPOLOGIES
- Two transistor forward
- Half bridge and full bridge
D2PAK (TO-263) Si HF830ASTRL-GE3 a IRF830ASTRLPb F a
I2PAK (TO-262) Si HF830AL-GE3 a IRF830ALPb F
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous...