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HS817B - Optocoupler

Download the HS817B datasheet PDF. This datasheet also covers the HS817 variant, as both devices belong to the same optocoupler family and are provided as variant models within a single manufacturer datasheet.

Description

The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.

BSI: EN 60065, EN 60950-1:2006 FIMKO UL file no.

Features

  • C 4 E 3.
  • Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak.
  • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV.
  • Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS.
  • Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak.
  • Creepage current resistance according to IEC 112, comparative tracking index: CTI  250.
  • Thickness through insulation  0.4 mm.
  • Isolation materials according to UL 94 V-O.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HS817-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HS817B
Manufacturer Vishay
File Size 180.79 KB
Description Optocoupler
Datasheet download datasheet HS817B Datasheet

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Full PDF Text Transcription

Click to expand full text
HS817, HS817G, HS817B, HS817BG www.vishay.com Vishay Semiconductors Optocoupler with Transistor Output FEATURES C 4 E 3 • Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV • Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS • Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak • Creepage current resistance according to IEC 112, comparative tracking index: CTI  250 • Thickness through insulation  0.4 mm • Isolation materials according to UL 94 V-O • Pollution degree 2 (resp. IEC 664) • Climatic classification 55/100/21 (IEC 68 part 1) • Low temperature coefficient of CTR • G = leadform 10.
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