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CNY66 - Optocoupler Phototransistor

Download the CNY66 datasheet PDF. This datasheet also covers the CNY64 variant, as both devices belong to the same optocoupler phototransistor family and are provided as variant models within a single manufacturer datasheet.

Description

The CNY64, CNY65, and CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package.

The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm.

Features

  • Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak.
  • Thickness through insulation  3 mm.
  • Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI  200.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CNY64-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CNY66
Manufacturer Vishay
File Size 120.37 KB
Description Optocoupler Phototransistor
Datasheet download datasheet CNY66 Datasheet

Full PDF Text Transcription

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CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage CNY64 Top View A C CNY65 C E DVE CNY66 17187-5 17187-4 DESCRIPTION The CNY64, CNY65, and CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm.
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