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BPW96C - Silicon NPN Phototransistor

Download the BPW96C datasheet PDF. This datasheet also covers the BPW96B variant, as both devices belong to the same silicon npn phototransistor family and are provided as variant models within a single manufacturer datasheet.

Description

BPW96 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package.

It is sensitive to visible and near infrared radiation.

Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Leads with stand-off.
  • High photo sensitivity.
  • High radiant sensitivity.
  • Suitable for visible and near infrared radiation.
  • Fast response times.
  • Angle of half sensitivity: ϕ = ± 20°.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note.
  • Please see document “Vishay Material Category Policy”: www. vishay. com.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BPW96B-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BPW96C
Manufacturer Vishay
File Size 109.73 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet BPW96C Datasheet

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Other Datasheets by Vishay

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Full PDF Text Transcription

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www.vishay.com BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor 94 8391 DESCRIPTION BPW96 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 20° • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.
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