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20WT04FN - High Performance Schottky Generation

Features

  • 175 °C high performance Schottky diode.
  • Very low forward voltage drop.
  • Extremely low reverse leakage.
  • Optimized VF vs. IR trade off for high efficiency Base cathode 4 Base cathode 4.
  • Increased ruggedness for reverse avalanche capability.
  • RBSOA available.
  • Negligible switching losses 3 1 Anode 2 Anode Cathode 2 1 Cathode 3 Anode Anode.
  • Submicron trench technology.
  • Full lead (Pb)-free and RoHS compliant devices.

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Datasheet Details

Part number 20WT04FN
Manufacturer Vishay
File Size 134.54 KB
Description High Performance Schottky Generation
Datasheet download datasheet 20WT04FN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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20UT04, 20WT04FN Vishay High Power Products High Performance Schottky Generation 5.0, 20 A 20UT04 20WT04FN FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency Base cathode 4 Base cathode 4 • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses 3 1 Anode 2 Anode Cathode 2 1 Cathode 3 Anode Anode • Submicron trench technology • Full lead (Pb)-free and RoHS compliant devices • Qualified for AEC Q101 I-PAK (TO-251AA) D-PAK (TO-252AA) APPLICATIONS • Specific for PV cells bypass diode • High efficiency SMPS PRODUCT SUMMARY IF(AV) VRRM Maximum VF at 20 A at 125 °C (1) Note (1) Measured connecting 2 anode pins 20 A 45 V 0.
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