20UT04 - High Performance Schottky Generation

Vishay

Key Features

175 °C high performance Schottky diode.
Very low forward voltage drop.
Extremely low reverse leakage.
Optimized VF vs. IR trade off for high efficiency Base cathode 4 Base cathode 4.
Increased ruggedness for reverse avalanche capability.
RBSOA available.
Negligible switching losses 3 1 Anode 2 Anode Cathode 2 1 Cathode 3 Anode Anode.
Submicron trench technology.
Full lead (Pb)-free and RoHS compliant devices.

20UT04 high performance schottky generation by Vishay - Datasheet Preview

Datasheet Details

Part number	20UT04
Manufacturer	Vishay
File Size	134.54 KB
Description	High Performance Schottky Generation
Datasheet	20UT04 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
20U6P45	RECTIFIER MODULE	ToshibaSemiconductor

Other Datasheets by Vishay

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

20UT04, 20WT04FN Vishay High Power Products High Performance Schottky Generation 5.0, 20 A 20UT04 20WT04FN FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency Base cathode 4 Base cathode 4 • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses 3 1 Anode 2 Anode Cathode 2 1 Cathode 3 Anode Anode • Submicron trench technology • Full lead (Pb)-free and RoHS compliant devices • Qualified for AEC Q101 I-PAK (TO-251AA) D-PAK (TO-252AA) APPLICATIONS • Specific for PV cells bypass diode • High efficiency SMPS PRODUCT SUMMARY IF(AV) VRRM Maximum VF at 20 A at 125 °C (1) Note (1) Measured connecting 2 anode pins 20 A 45 V 0.