1N4448WS Datasheet | Vishay

FEATURES - Silicon epitaxial planar diode - Fast switching diodes - AEC-Q101 qualified available - Base P/N-E3 - Ro HS-pliant, mercial grade - Base P/N-HE3 - Ro HS-pliant, AEC-Q101 qualified - Material categorization: for definitions of pliance please see .vishay./doc?99912 PARTS TABLE PART ORDERING CODE 1N4448WS-E3-08 or 1N4448WS-E3-18 1N4448WS-HE3-08 or 1N4448WS-HE3-18 CIRCUIT CONFIGURATION Single TYPE MARKING A3 REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Reverse voltage Repetitive peak reverse voltage VRRM Average rectified current half wave rectification with resistive load (1) f ≥ 50 Hz IF(AV) Surge forward current Power dissipation (1) t < 1 s and Tj = 25 °C IFSM Ptot VALUE 75 100 350 200 THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to ambient air (1) Junction temperature Storage...