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BF996S - N.Channel Dual Gate MOS-Fieldeffect Tetrode

Datasheet Summary

Features

  • D Integrated gate protection diodes D Low noise figure D Low feedback capacitance 2 1 D High cross modulation performance D Low input capacitance D High AGC-range G2 G1 D 94 9279 13 579 3 4 12623 BF996S Marking: MH Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2, 4=Gate 1 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature ra.

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Datasheet Details

Part number BF996S
Manufacturer Vishay Telefunken
File Size 133.71 KB
Description N.Channel Dual Gate MOS-Fieldeffect Tetrode
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Full PDF Text Transcription

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BF996S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners.
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