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BB814
Vishay Telefunken
Silicon Epitaxial Planar Dual Capacitance Diode
Features
D Common cathode
Applications
Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios
94 8550
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IF Tj Tstg Value 20 18 50 125 –55...+150 Unit V V mA °C °C
Electrical Characteristics
Tj = 25_C Parameter Reverse current Diode capacitance 1) Test Conditions VR=16V VR=16V, Tj=60°C VR=2V VR=8V Capacitance ratio Series resistance
1)
Type
Group 1 Group 2 Group 1 Group 2
VR=2V,8V, f=1MHz CD=38pF, f=100MHz
Symbol Min IR IR CD 43 CD 44.5 CD 19.1 CD 19.75 CD2/ CD8 2.
BB814 Datasheet
