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VQ3001P - Dual N-/Dual P-Channel 30-V (D-S) MOSFETs

Key Features

  • D D D D D Low On-Resistance: 0.8/1.6 W Low Threshold: 1.5/.
  • 3.1 V Low Input Capacitance: 38/60 pF Fast Switching Speed: 9/16 ns Low Input and Output Leakage.

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Datasheet Details

Part number VQ3001P
Manufacturer Vishay
File Size 50.44 KB
Description Dual N-/Dual P-Channel 30-V (D-S) MOSFETs
Datasheet download datasheet VQ3001P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) N-Channel P-Channel 30 –30 rDS(on) Max (W) 1 @ VGS = 12 V 2 @ VGS = –12 V VGS(th) (V) 0.8 to 2.5 –2 to –4.5 ID (A) 0.85 –0.6 FEATURES D D D D D Low On-Resistance: 0.8/1.6 W Low Threshold: 1.5/–3.1 V Low Input Capacitance: 38/60 pF Fast Switching Speed: 9/16 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.