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VOM453T - (VOM452T / VOM453T) Analog High Speed Optocoupler

Download the VOM453T datasheet PDF. This datasheet also covers the VOM452T variant, as both devices belong to the same (vom452t / vom453t) analog high speed optocoupler family and are provided as variant models within a single manufacturer datasheet.

Description

The VOM452T and VOM453T, high speed optocouplers, each consists of a GaAlAs infrared emitting diode, optically coupled with an integrated photo detector and a high speed transistor.

The photo detector is junction isolated from the transistor to reduce miller capacitance effects.

Features

  • Surface mountable A 1 6 VCC 5 C C 3 20409-2.
  • Industry standard SOP-5 footprint.
  • Compatible with infrared vapor phase reflow and wave soldering processes.
  • Isolation test voltage, 3750 VRMS.
  • Very high common mode transient immunity: 15 000 V/µs at VCM = 1500 V guaranteed (VOM453T).
  • High speed: 1 MBd.
  • TTL compatible.
  • Open collector output 4 E 20409-1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VOM452T_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VOM453T
Manufacturer Vishay
File Size 174.09 KB
Description (VOM452T / VOM453T) Analog High Speed Optocoupler
Datasheet download datasheet VOM453T Datasheet

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VOM452T (VOM452T / VOM453T) Analog High Speed Optocoupler

Full PDF Text Transcription

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VOM452T, VOM453T Vishay Semiconductors Analog High Speed Optocoupler, 1 MBd, Transistor Output, SOP-5 Package FEATURES • Surface mountable A 1 6 VCC 5 C C 3 20409-2 • Industry standard SOP-5 footprint • Compatible with infrared vapor phase reflow and wave soldering processes • Isolation test voltage, 3750 VRMS • Very high common mode transient immunity: 15 000 V/µs at VCM = 1500 V guaranteed (VOM453T) • High speed: 1 MBd • TTL compatible • Open collector output 4 E 20409-1 DESCRIPTION The VOM452T and VOM453T, high speed optocouplers, each consists of a GaAlAs infrared emitting diode, optically coupled with an integrated photo detector and a high speed transistor. The photo detector is junction isolated from the transistor to reduce miller capacitance effects.
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